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| Power Transistors 2SD2544 Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio Unit: mm s Features q q 13.00.2 4.20.2 5.00.1 10.00.2 1.0 q 2.50.2 High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE Allowing supply with the radial taping (TC=25C) Ratings 60 60 7 8 4 15 2 150 -55 to +150 Unit V V V A A W C C 90 1.20.1 18.00.5 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg C1.0 2.250.2 0.350.1 0.650.1 1.050.1 0.550.1 0.550.1 C1.0 123 2.50.2 2.50.2 1:Base 2:Collector 3:Emitter MT4 Type Package s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h (TC=25C) Symbol ICBO IEBO VCEO hFE1 hFE2 VCE(sat) VBE(sat) fT ton tstg tf * Conditions VCB = 60V, IE = 0 VEB = 7V, IC = 0 IC = 10mA, IB = 0 VCE = 2V, IC = 0.8A VCE = 2V, IC = 2A IC = 2A, IB = 50mA IC = 2A, IB = 50mA VCE = 10V, IC = 0.5A, f = 10MHz IC = 2A, IB1 = 50mA, IB2 = -50mA, VCC = 50V min typ max 10 10 Unit A A V 60 500 60 0.5 1.5 70 0.5 3.6 1.1 1000 2000 V V MHz s s s FE1 Rank classification Q P Rank hFE1 500 to 1200 800 to 2000 1 Power Transistors PC -- Ta 20 8 (1) TC=Ta (2) Without heat sink (PC=2.0W) 15 (1) IB=100mA 7 50mA TC=25C 2SD2544 IC -- VCE 10 VBE(sat) -- IC Base to emitter saturation voltage VBE(sat) (V) IC/IB=20 Collector power dissipation PC (W) 3 Collector current IC (A) 6 20mA 5 10mA 4 6mA 3 4mA 2 2mA 1 0 1 TC=-25C 100C 10 0.3 25C 0.1 5 0.03 (2) 0 0 20 40 60 80 100 120 140 160 0 2 4 6 8 10 12 0.01 0.1 0.3 1 3 10 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) 10 IC/IB=20 10 hFE -- IC 1000 VCE=5V fT -- IC VCE=10V f=10MHz TC=25C Forward current transfer ratio hFE 3 TC=100C TC=100C 25C -25C Transition frequency fT (MHz) 10 3 1 0.3 0.1 0.03 0.01 0.003 300 1 100 0.3 30 0.1 25C -25C 10 0.03 3 0.01 0.01 0.03 0.1 0.3 1 3 10 0.001 0.01 0.03 0.1 0.3 1 3 1 0.01 0.03 0.1 0.3 1 3 10 Collector current IC (A) Collector current IC (A) Collector current IC (A) Cob -- VCB 1000 Area of safe operation (ASO) 100 IE=0 f=1MHz TC=25C 30 Non repetitive pulse TC=25C Collector output capacitance Cob (pF) 300 Collector current IC (A) 10 ICP IC 3 DC 1 10ms 0.3 0.1 0.03 t=1ms 100 30 10 3 1 1 3 10 30 100 0.01 1 3 10 30 100 300 1000 Collector to base voltage VCB (V) Collector to emitter voltage VCE (V) 2 Power Transistors Rth(t) -- t 10000 Note: Rth was measured at Ta=25C and under natural convection. (1) Without heat sink (2) With a 50 x 50 x 2mm Al heat sink 2SD2544 Thermal resistance Rth(t) (C/W) 1000 100 (1) (2) 10 1 0.1 10-4 10-3 10-2 10-1 1 10 102 103 104 Time t (s) 3 |
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